cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 1/ 10 MTBA5N10FP cystek product specification n-channel enhancement mode power mosfet MTBA5N10FP bv dss 100v i d 10a r ds(on) @v gs =10v, i d =10a 151 m (typ) r ds(on) @v gs =4.5v, i d =10a 165 m (typ) description the MTBA5N10FP is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-220fp package is universally preferre d for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? insulating package, front/back side insulating voltage=2500v(ac) ? rohs compliant package symbol outline MTBA5N10FP to-220fp g gate d drain s source g d s
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 2/ 10 MTBA5N10FP cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage (note 1) v ds 100 gate-source voltage v gs 20 v continuous drain current @t c =25 c, v gs =10v (note 1) 10 continuous drain current @t c =100c, v gs =10v (note 1) i d 6.3 continuous drain current @t a =25 c, v gs =10v (note 2) 2.5 continuous drain current @t a =70 c, v gs =10v (note 2) i dsm 2 pulsed drain current @ v gs =10v (note 3) i dm 20 avalanche current (note 3) i as 10 a single pulse avalanche energy @ l=0.2mh, i d =10amps, v dd =25v (note 2) e as 10 repetitive avalanche energy (note 3) e ar 3 mj t c =25 c (note 1) 31 t c =100c (note 1) p d 12 t a =25 c (note 2) 2 power dissipation t a =70 c (note 2) p dsm 1.3 w maximum temperature for solder ing @ lead at 0.063 in(1.6mm) from case for 10 seconds t l 300 maximum temperature for soldering @ package body for 10 seconds t pkg 260 operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 4 c/w thermal resistance, junction-to-ambient, max (note 2) r ja 62.5 c/w note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c c. the value in any given application depend s on the user?s specific board design, and the maximum temperature of 175 c c may be used if the pcb allows it. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c c.
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 3/ 10 MTBA5N10FP cystek product specification characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.08 - v/ c reference to 25c, i d =250 a v gs(th) 1 1.5 2.5 v v ds = v gs , i d =250 a *g fs - 13 - s v ds =5v, i d =10a i gss - - d 100 na v gs = d 20v i dss - - 1 v ds =80v, v gs =0v i dss - - 10 a v ds =80v, v gs =0v, tj=125 c - 151 180 v gs =10v, i d =10a *r ds(on) - 165 200 m v gs =4.5v, i d =10a dynamic *qg - 8.4 - *qgs - 1.0 - *qgd - 2.8 - nc v dd =80v, i d =10a,v gs =10v *t d(on) - 4 - *tr - 3 - *t d(off) - 9 - *t f - 4 - ns v dd =50v, i d =10a, v gs =10v, r g =6 ciss - 303 - coss - 35 - crss - 15 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *i s - - 10 *i sm - - 20 a *v sd - 0.9 1.3 v i s =10a, v gs =0v *trr - 60 - ns *qrr - 95 - nc v gs =0, i f =10a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTBA5N10FP-0-ub-s to-220fp (rohs compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 4/ 10 MTBA5N10FP cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 012345678910 v ds , drain-source voltage(v) i d , drain current (a) 10v, 9v, 8v, 7v, 6v, 5v, 4v v gs =3v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3v v gs =2.5v v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 100 120 140 160 180 200 220 240 260 280 300 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =10a r ds( on) @tj=25c : 151m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =10a
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 5/ 10 MTBA5N10FP cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =10a v ds =50v v ds =80v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, jc =4c/w single pulse dc 100ms r dson limited 100 s 10ms 1ms maximum drain current vs case temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v r jc =4c/w
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 6/ 10 MTBA5N10FP cystek product specification typical characteristics(cont.) typical transfer characteristics 0 2 4 6 8 10 12 14 16 18 20 0246810 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to case 10 100 1000 10000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j( m ax) =150c t c =25c jc =4c/w transient thermal response curves 0.001 0.01 0.1 1 10 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t1/t2 3.t jm -t c =p dm *r jc (t) 4.r jc =4c/w
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 7/ 10 MTBA5N10FP cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 8/ 10 MTBA5N10FP cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 9/ 10 MTBA5N10FP cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 217 c 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c731fp issued date : 2012.12.06 revised date : page no. : 10/ 10 MTBA5N10FP cystek product specification to-220fp dimension *typical inches millimeters style: pin 1.gate 2.drain 3.source 3-lead to-220fp plastic package cystek package code: fp marking: date code device name ba5 n10 inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.171 0.183 4.35 4.65 g 0.246 0.258 6.25 6.55 a1 0.051 ref 1.300 ref h 0.138 ref 3.50 ref a2 0.112 0.124 2.85 3.15 h1 0.055 ref 1.40 ref a3 0.102 0.110 2.60 2.80 h2 0.256 0.272 6.50 6.90 b 0.020 0.030 0.50 0.75 j 0.031 ref 0.80 ref b1 0.031 0.041 0.80 1.05 k 0.020 0.50 ref b2 0.047 ref 1.20 ref l 1.102 1.118 28.00 28.40 c 0.020 0.030 0.500 0.750 l1 0.043 0.051 1.10 1.30 d 0.396 0.404 10.06 10.26 l2 0.036 0.043 0.92 1.08 e 0.583 0.598 14.80 15.20 m 0.067 ref 1.70 ref e 0.100 * 2.54* n 0.012 ref 0.30 ref f 0.106 ref 2.70 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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